60v p-channel mosfet general description these p-channel enhancement mode power field effect transistors are produced using kersemi proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. these devices are well suited for low voltage applications such as automotive, dc/dc converters, and high efficiency switching for power management in portable and battery operated products. features ? -12a, -60v, r ds(on) = 0.135 ? @v gs = -10 v ? low gate charge ( typical 21 nc) ? low crss ( typical 80 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter KSMD17P06 / ksmu17p06 units v dss drain-source voltage -60 v i d drain current - continuous (t c = 25c) -12 a - continuous (t c = 100c) -7.6 a i dm drain current - pulsed (note 1) -48 a v gss gate-source voltage 25 v e as single pulsed avalanche energy (note 2) 300 mj i ar avalanche current (note 1) -12 a e ar repetitive avalanche energy (note 1) 4.4 mj dv/dt peak diode recovery dv/dt (note 3) -7.0 v/ns p d power dissipation (t a = 25c) * 2.5 w power dissipation (t c = 25c) 44 w - derate above 25c 0.35 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 2.85 c / w r ja thermal resistance, junction-to-ambient * -- 50 c / w r ja thermal resistance, junction-to-ambient -- 110 c / w * when mounted on the minimum pad size recommended (pcb mount) ? ? ? ? ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? ! ! ! ! ! ! ! ! ! ! ! ! s d g KSMD17P06 / ksmu17p06 to-252 to-251 2014-7-19 1 www.kersemi.com
elerical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 2.4mh, i as = -12a, v dd = -25v, r g = 25 ?, starting t j = 25c 3. i sd -17a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -60 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25c -- -0.06 -- v/c i dss zero gate voltage drain current v ds = -60 v, v gs = 0 v -- -- -1 a v ds = -48 v, t c = 125c -- -- -10 a i gssf gate-body leakage current, forward v gs = -25 v, v ds = 0 v -- -- -100 na i gssr gate-body leakage current, reverse v gs = 25 v, v ds = 0 v -- -- 100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = -250 a -2.0 -- -4.0 v r ds(on) static drain-source on-resistance v gs = -10 v, i d = -6.0 a -- 0.11 0.135 ? g fs forward transconductance v ds = -30 v, i d = -6.0 a -- 8.7 -- s dynamic characteristics c iss input capacitance v ds = -25 v, v gs = 0 v, f = 1.0 mhz -- 690 900 pf c oss output capacitance -- 325 420 pf c rss reverse transfer capacitance -- 80 105 pf switching characteristics t d(on) turn-on delay time v dd = -30 v, i d = -8.5 a, r g = 25 ? -- 13 35 ns t r turn-on rise time -- 100 210 ns t d(off) turn-off delay time -- 22 55 ns t f turn-off fall time -- 60 130 ns q g total gate charge v ds = -48 v, i d = -17 a, v gs = -10 v -- 21 27 nc q gs gate-source charge -- 4.2 -- nc q gd gate-drain charge -- 10 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- -12 a i sm maximum pulsed drain-source diode forward current -- -- -48 a v sd drain-source diode forward voltage v gs = 0 v, i s = -12 a -- -- -4.0 v t rr reverse recovery time v gs = 0 v, i s = -17 a, di f / dt = 100 a/ s -- 92 -- ns q rr reverse recovery charge -- 0.32 -- c (note 4) (note 4, 5) (note 4, 5) (note 4) KSMD17P06 / ksmu17p06 2014-7-19 2 www.kersemi.com
0 102030405060 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 0.36 0.40 note : t j = 25 v gs = - 20v v gs = - 10v r ds(on) [ ? ], drain-source on-resistance -i d , drain current [a] 10 -1 10 0 10 1 10 0 10 1 v gs top : - 15.0 v - 10.0 v - 8.0 v - 7.0 v - 6.0 v - 5.5 v - 5.0 v bottom : - 4.5 v notes : 1. 250 s pulse test 2. t c = 25 -i d , drain current [a] -v ds , drain-source voltage [v] 0 4 8 12 16 20 24 0 2 4 6 8 10 12 v ds = -30v v ds = -48v note : i d = -17 a -v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 1400 1600 1800 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 -i dr , reverse drain current [a] -v sd , source-drain voltage [v] 246810 10 -1 10 0 10 1 150 25 -55 notes : 1. v ds = -30v 2. 250 s pulse test -i d , drain current [a] -v gs , gate-source voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics KSMD17P06 / ksmu17p06 2014-7-19 3 www.kersemi.com
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : 1. z jc (t) = 2.85 /w m ax. 2. d uty f a ctor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al response t 1 , s q ua re w ave p ulse d u ra tion [se c] 25 50 75 100 125 150 0 2 4 6 8 10 12 -i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse -i d , drain current [a] -v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = -10 v 2. i d = -6.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = -250 a -bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2 KSMD17P06 / ksmu17p06 2014-7-19 4 www.kersemi.com
charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms KSMD17P06 / ksmu17p06 2014-7-19 5 www.kersemi.com
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g compliment of dut (n-channel) v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g compliment of dut (n-channel) v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- KSMD17P06 / ksmu17p06 2014-7-19 6 www.kersemi.com
package dimensions 6.60 dpak KSMD17P06 / ksmu17p06 2014-7-19 7 www.kersemi.com
package dimensions (continued) 6.60 ipak KSMD17P06 / ksmu17p06 2014-7-19 8 www.kersemi.com
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